Mostrando 10 resultados de: 64
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Solid-State Electronics(5)
2019 IEEE 4th Ecuador Technical Chapters Meeting, ETCM 2019(4)
2022 IEEE 13th Latin American Symposium on Circuits and Systems, LASCAS 2022(4)
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2018 IEEE 3rd Ecuador Technical Chapters Meeting, ETCM 2018(3)
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High-Speed and Low-Energy Dual-Mode Logic based Single-Clack-Cycle Binary Comparator
Conference ObjectAbstract: This paper presents an energy-efficient single-clock-cycle binary Dual-Mode Logic (DML)-based comparPalabras claves:arithmetic circuits, binary comparator, CMOS, Dual-mode logicAutores:Luis Miguel Procel Moya, Marco Lanuzza, Ramiro Taco, Ricardo Escobar, Trojman L.Fuentes:scopusEnergy efficient self-adaptive dual mode logic address decoder
ArticleAbstract: This paper presents a 1024-bit self-adaptive memory address decoder based on Dual Mode Logic (DML) dPalabras claves:Address decoder, Controller, Dual mode logic, Self-adaptiveAutores:Ariana Musello, Cristhopher Mosquera, Esteban Garzón, Kevin Vicuña, Luis Miguel Procel Moya, Mateo Rendón, Ramiro Taco, Sara Benedictis, Trojman L.Fuentes:googlescopusEnergy-Efficient FinFET-Versus TFET-Based STT-MRAM Bitcells
Conference ObjectAbstract: This paper explores STT-MRAM bitcells based on double-barrier magnetic tunnel junctions (DMTJs) at tPalabras claves:double-barrier magnetic tunnel junction (DMTJ), FinFET, STT-MRAM, tunnel FET (TFET), Ultralow voltageAutores:Ariana Musello, Luis Miguel Procel Moya, Marco Villegas, Ramiro Taco, Santiago S. Perez, Trojman L.Fuentes:googlescopusExploiting Double-Barrier MTJs for Energy-Efficient Nanoscaled STT-MRAMs
Conference ObjectAbstract: This paper explores performance and technology-scalability of STT-MRAMs exploiting double-barrier MTPalabras claves:double-barrier magnetic tunnel junction (DMTJ), FinFET, STT-MRAM, technology-voltage scalingAutores:Carpentieri M., Crupi F., Esteban Garzón, Finocchio G., Marco Lanuzza, Rose R.D., Trojman L.Fuentes:scopusFabrication of Nanopores Using the Controlled Dielectric Breakdown Technique
Conference ObjectAbstract: Controlled dielectric breakdown is becoming the main solid-state nanopore fabrication technique worlPalabras claves:ACC, controlled dielectric breakdown, DAQ, DNA RNA sensor, fluidic cell, leakage current, Silicon nitride, solid-state nanopores, transmembraneAutores:Amaguayo N., Ariana Musello, José A. Bustamante, Luis Miguel Procel Moya, Pablo Lopez, Trojman L.Fuentes:scopusFrom 32 nm to TFET Technology: New Perspectives for Ultra-Scaled RF-DC Multiplier Circuits
ArticleAbstract: In this present work, different Cross-Coupled Differential Drive (CCDD) CMOS bridge rectifiers are dPalabras claves:32 nm, CCDD, Full wave rectifier, Multiplier, PCE, TFET, VCEAutores:Eduardo Ortiz-Holguin, Luis Miguel Procel Moya, Marco Villegas, Ramiro Taco, Trojman L.Fuentes:googlescopusDefect-centric distribution of channel hot carrier degradation in nano-MOSFETs
ArticleAbstract: The defect-centric distribution is used, for the first time, to study the channel hot carrier (CHC)Palabras claves:channel hot-carrier, defect-centric distribution, nFETAutores:Crupi F., Franco J., Kaczer B., Luis Miguel Procel Moya, Trojman L.Fuentes:googlescopusBreast cancer, screening and diagnostic tools: All you need to know
ReviewAbstract: Breast cancer is one of the most frequent malignancies among women worldwide. Methods for screeningPalabras claves:Artificial Intelligence, biopsy, Breast Cancer, diagnosis, Genetic profiling, Mammography, screening, toolsAutores:Andrés Caicedo, Ariana León-Sosa, D. A. Barba Carrera, Daniela Suquillo, Fernando Torres, Lugo P., Surre F., Trojman L.Fuentes:scopusEffects of the technology scaling down to 28nm on Ultra-Low Voltage and Power OTA performance using TCAD simulations
Conference ObjectAbstract: In this paper, the effect on the performances of the technology scaling down to 28nm (bulk and planaPalabras claves:28nm, 90nm, Feed Forward rejection, OTA, PDK, Pseudo Differential Pair, TCAD simulation, Ultra-low power, Ultra-low voltageAutores:André Borja, Juan Orozco, Luis Miguel Procel Moya, Mateo Bonilla, Mateo Valencia, Ramiro Taco, Trojman L.Fuentes:scopusEfficiency of Double-Barrier Magnetic Tunnel Junction-Based Digital eNVM Array for Neuro-Inspired Computing
ArticleAbstract: This brief deals with the impact of spin-transfer torque magnetic random access memory (STT-MRAM) cePalabras claves:double-barrier magnetic tunnel junction (DMTJ), energy-efficiency, MNIST dataset, multilayer perceptron (MPL), online classification, STT-MRAMAutores:Crupi F., Esteban Garzón, Marco Lanuzza, Tatiana Moposita, Trojman L., Vladimirescu A.Fuentes:scopus