Mostrando 10 resultados de: 21
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2019 IEEE 4th Ecuador Technical Chapters Meeting, ETCM 2019(2)
2020 IEEE ANDESCON, ANDESCON 2020(2)
2022 IEEE 13th Latin American Symposium on Circuits and Systems, LASCAS 2022(2)
Electronics (Switzerland)(2)
Solid-State Electronics(2)
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Física aplicada(11)
Bergsonismo e intuicionismo(1)
Electricidad y electrónica(1)
Física(1)
Instrumentos de precisión y otros dispositivos(1)
Assessment of STT-MRAM performance at nanoscaled technology nodes using a device-to-memory simulation framework
ArticleAbstract: This paper deals with the technology scalability of spin-transfer torque magnetic RAMs (STT-MRAMs)baPalabras claves:Device-to-memory analysis, FinFET, Magnetic tunnel junction (MTJ), STT-MRAM, technology scalingAutores:Crupi F., Esteban Garzón, Marco Lanuzza, Rose R.D., Trojman L.Fuentes:scopusAssessment of STT-MRAMs based on double-barrier MTJs for cache applications by means of a device-to-system level simulation framework
ArticleAbstract: This paper explores non-volatile cache memories implemented by spin-transfer torque magnetic randomPalabras claves:cache memory, Device-to-system simulation framework, double-barrier magnetic tunnel junction (DMTJ), FinFET, STT-MRAMAutores:Carpentieri M., Crupi F., Esteban Garzón, Finocchio G., Marco Lanuzza, Rose R.D., Trojman L.Fuentes:scopusA low-voltage, low-power reconfigurable current-mode softmax circuit for analog neural networks
ArticleAbstract: This paper presents a novel low-power low-voltage analog implementation of the softmax function, witPalabras claves:Activation functions, Deep Neural Networks, Machine learning, SoftmaxAutores:Crupi F., Marco Lanuzza, Strangio S., Tatiana Moposita, Trojman L., Vatalaro M., Vladimirescu A.Fuentes:scopusEfficiency of Double-Barrier Magnetic Tunnel Junction-Based Digital eNVM Array for Neuro-Inspired Computing
ArticleAbstract: This brief deals with the impact of spin-transfer torque magnetic random access memory (STT-MRAM) cePalabras claves:double-barrier magnetic tunnel junction (DMTJ), energy-efficiency, MNIST dataset, multilayer perceptron (MPL), online classification, STT-MRAMAutores:Crupi F., Esteban Garzón, Marco Lanuzza, Tatiana Moposita, Trojman L., Vladimirescu A.Fuentes:scopusModel for resistive switching in bipolar Hafnium-based memories
Conference ObjectAbstract: A new simple model for set-reset operation in resistive random access memories (ReRAM) is presented.Palabras claves:Autores:Laurent Raymond, Silvana Guitarra, Trojman L.Fuentes:googlescopusVoltage-to-Voltage Sigmoid Neuron Activation Function Design for Artificial Neural Networks
Conference ObjectAbstract: An Artificial Neural Network (ANN) involves a complex network of interconnected nodes called artificPalabras claves:Artificial Neural Network, non-linear transfer function, Pseudo Differential Pair, sigmoid activation functionAutores:Crupi F., Marco Lanuzza, Tatiana Moposita, Trojman L., Vladimirescu A.Fuentes:scopusStochastic based compact model to pbkp_redict highly variable electrical characteristics of organic CBRAM devices
ArticleAbstract: A compact model is proposed using a stochastic approach to capture the resistive switching behaviorPalabras claves:Conductive-bridge random access (CBRAM), Polyethylene oxide (PEO), stochastic model, Switching probabilityAutores:Deleruyelle D., Laurent Raymond, Mahato P., Silvana Guitarra, Trojman L.Fuentes:googlescopusStochastic multiscale model for HfO<inf>2</inf>-based resistive random access memories with 1T1R configuration
ArticleAbstract: In this paper, we propose a stochastic model for the resistive switching of ReRAM devices with 1T1RPalabras claves:1T1R configuration, HfO -based memory 2, Intrinsic parameters, Resistive random access memory (ReRAM), stochastic model, Switching probabilityAutores:Laurent Raymond, Silvana Guitarra, Trojman L.Fuentes:googlescopusImplementation and Comparison of a Fast Shape Recognition Algorithm using Different FPGA Platforms
Conference ObjectAbstract: In the present work, we implement and compare a fast shape recognition algorithm in two FPGA platforPalabras claves:computer vison, Fpga, HDL, Shape recognitionAutores:André Borja, Daniel Cárdenas, Germán Arévalo Bermeo, Luis Miguel Procel Moya, Trojman L., Varengues G.Fuentes:scopusEffects of the technology scaling down to 28nm on Ultra-Low Voltage and Power OTA performance using TCAD simulations
Conference ObjectAbstract: In this paper, the effect on the performances of the technology scaling down to 28nm (bulk and planaPalabras claves:28nm, 90nm, Feed Forward rejection, OTA, PDK, Pseudo Differential Pair, TCAD simulation, Ultra-low power, Ultra-low voltageAutores:André Borja, Juan Orozco, Luis Miguel Procel Moya, Mateo Bonilla, Mateo Valencia, Ramiro Taco, Trojman L.Fuentes:scopus