Mostrando 4 resultados de: 4
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2017 IEEE International Autumn Meeting on Power, Electronics and Computing, ROPEC 2017(2)
Microelectronic Engineering(1)
Solid-State Electronics(1)
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Física aplicada(3)
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Métodos informáticos especiales(1)
Sistema de escritura, fonología y fonética inglesas(1)
On recoverable behavior of PBTI in AlGaN/GaN MOS-HEMT
ArticleAbstract: This experimental study focuses on the positive bias temperature instability (PBTI) in a fully recesPalabras claves:AlGaN/GaN MOS-HEMT, Oxide traps, PBTI, Recessed gate, SiO 2Autores:Crupi F., Eliana Acurio, Iucolano F., Magnone P., Meneghesso G., Trojman L.Fuentes:googlescopusImplementation and optimization of the algorithm of automatic color enhancement in digital images
Conference ObjectAbstract: This paper studies the implementation of an algorithm to enhance the color of an image by considerinPalabras claves:Autores:Juan Sebastian Romero, Luis Miguel Prócel Moya, Trojman L., Verdier D.Fuentes:googlescopusImpact of AlN layer sandwiched between the GaN and the Al<inf>2</inf>O<inf>3</inf> layers on the performance and reliability of recessed AlGaN/GaN MOS-HEMTs
ArticleAbstract: This work compares the performance and the reliability of recessed-gate AlGaN/GaN MOS-HEMTs with twoPalabras claves:Al O 2 3, BTI, GaN, MOS-HEMTsAutores:Crupi F., Eliana Acurio, Iucolano F., Magnone P., Trojman L.Fuentes:googlescopusMobility extraction for 24-nm-channel length n-MOS using the RFCV technique: Effect of the fabrication process
Conference ObjectAbstract: In this article, we study the mobility for short devices (down to 24-nm-channel length) using the RFPalabras claves:additional mobility, Halo, n-MOS, RFCV, short channel device, SION, Y-functionAutores:DIego R. Benalcázar, Jobard G., Luis Miguel Prócel Moya, Trojman L.Fuentes:googlescopus