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A Defect-Centric perspective on channel hot carrier variability in nMOSFETs
ArticleAbstract: In this work we confirm the validity of the Defect-Centric distribution for predicting the CHC behavPalabras claves:channel hot carrier degradation, defect-centric distribution, variabilityAutores:Crupi F., Franco J., Kaczer B., Luis Miguel Procel Moya, Trojman L., Tuinhout H., Wils N.Fuentes:googlescopusAssessment of STT-MRAM performance at nanoscaled technology nodes using a device-to-memory simulation framework
ArticleAbstract: This paper deals with the technology scalability of spin-transfer torque magnetic RAMs (STT-MRAMs)baPalabras claves:Device-to-memory analysis, FinFET, Magnetic tunnel junction (MTJ), STT-MRAM, technology scalingAutores:Crupi F., Esteban Garzón, Marco Lanuzza, Rose R.D., Trojman L.Fuentes:scopusDC and low-frequency noise behavior of the conductive filament in bipolar HfO2-based resistive random access memory
ArticleAbstract: This paper addresses the low frequency noise (LFN) properties of bipolar HfO<inf>2</inf>-based resisPalabras claves:Hafnium oxide, low frequency noise, Non-volatile memory, Quantum point contact, Resistive RAMAutores:Crupi F., Goux L., Luis Miguel Procel Moya, Maccaronio V., Miranda E., Simoen E., Trojman L.Fuentes:googlescopusImpact of AlN layer sandwiched between the GaN and the Al2O3 layers on the performance and reliability of recessed AlGaN/GaN MOS-HEMTs
ArticleAbstract: This work compares the performance and the reliability of recessed-gate AlGaN/GaN MOS-HEMTs with twoPalabras claves:Al O 2 3, Al2O3, BTI, GaN, MOS-HEMTsAutores:Crupi F., Eliana Acurio, Iucolano F., Magnone P., Trojman L.Fuentes:googlescopusReduction of the anomalous VT behavior in MOSFETs with high-κ/metal gate stacks
ArticleAbstract: This study investigates the impact of different nitridation processes on hafnium silicon oxynitridePalabras claves:Hafnium silicon oxynitride, Nitridation, Threshold voltageAutores:A. Kottantharayil, Isabelle Ferain, J. Petry, K. De Meyer, Luigi Pantisano, M. Jurczak, N. Collaert, Trojman L.Fuentes:scopusPerformance assessment of (1 1 0) p-FET high-κ/MG: is it mobility or series resistance limited?
ArticleAbstract: In this article the impact of Si-substrate orientation on mobility performance is studied for p-MOSFPalabras claves:high-κ, Mobility and performance, short-channel devices, Si Substrate orientationAutores:E. San Andrés, Groeseneken G., Herman E. Maes, Isabelle Ferain, Luigi Pantisano, M. Heyns, S. De Gendt, Simone Severi, T. Hoffman, Trojman L.Fuentes:scopusMobility extraction using RFCV for 80 nm MOSFET with 1 nm EOT HfSiON/TiN
ArticleAbstract: In this paper we show an experimental procedure to measure channel carrier mobility in technologicalPalabras claves:HfSiON, Mobility, RFCV, short channel, Split-CVAutores:E. San Andrés, Groeseneken G., Isabelle Ferain, Luigi Pantisano, M. Heyns, M. Jurczak, M. Toledano-Luque, S. De Gendt, Simone Severi, Trojman L.Fuentes:scopusBarrier permeation effects on the inversion layer subband structure and its applications to the electron mobility
OtherAbstract: The electron wave functions in the inversion layer are analyzed in the case where the dielectric barPalabras claves:electron mobility, High-k dielectrics, MOSFET, Wave function permeationAutores:B. Sorée, G. S. Lujan, K. De Meyer, L. Ragnarsson, M. Heyns, S. De Gendt, S. Kubicek, Trojman L., W. MagnusFuentes:scopusEffect of the dielectric thickness and the metal deposition technique on the mobility for HfO2/TaN NMOS devices
OtherAbstract: In this paper the effects from the high-κdielectric thickness and the metal gate deposition techniquPalabras claves:High-κ metal gate MOS transistor, Metal deposition, Mobility reduction, Oxide thickness, Screening effectAutores:A. Van Ammel, F. Cubaynes, G. S. Lujan, Groeseneken G., L. Ragnarsson, Luigi Pantisano, M. Heyns, M. Houssa, M. Schaekers, S. De Gendt, T. Schram, Trojman L.Fuentes:scopus