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scopus(8)
A silicon carbide-based highly transparent passivating contact for crystalline silicon solar cells approaching efficiencies of 24%
ArticleAbstract: A highly transparent passivating contact (TPC) as front contact for crystalline silicon (c-Si) solarPalabras claves:Autores:Cao P., Ding K., Duan W., Eberst A., Finger F., Isabella O., Kirchartz T., Klingebiel B., Köhler M., Lambertz A., Li S., Luysberg M., Macco B., Paul Procel, Pomaska M., Qiu K., Rau U., Santbergen R., Zamchiy A.Fuentes:scopusAdvanced method for electrical characterization of carrier-selective passivating contacts using transfer-length-method measurements under variable illumination
ArticleAbstract: Carrier-selective passivating contacts have been demonstrated to be crucial to reach the practical ePalabras claves:Autores:Allebé C., Badel N., Ballif C., Boccard M., Christmann G., Descoeudres A., Despeisse M., Geissbühler J., Isabella O., Nicolay S., Paul Procel, Paviet-Salomon B., Senaud L.L., Wyss P., Zeman M.Fuentes:scopusDesign and optimization of hole collectors based on nc-SiO<inf>x</inf>:H for high-efficiency silicon heterojunction solar cells
ArticleAbstract: Low activation energy (Ea) and wide bandgap (Eg) are essential for (p)-contacts to achieve effectivePalabras claves:Activation energy (E ) a, Contact resistivity (ρ ) c, Hydrogenated nanocrystalline silicon oxide (nc-SiO :H) x, Interface treatment, optoelectrical properties, Silicon heterojunction (SHJ)Autores:Han C., Isabella O., Mazzarella L., Paul Procel, Weeber A., Yang G., Zeman M., Zhao Y.Fuentes:scopusErratum: High-Mobility Hydrogenated Fluorine-Doped Indium Oxide Film for Passivating Contacts c-Si Solar Cells (ACS Appl. Mater. Interfaces (2019) 11:49 (45586−45595) DOI: 10.1021/acsami.9b14709)
OtherAbstract: The authors inadvertently misreported the order of magnitude of the TCO deposition pressure, for whiPalabras claves:Autores:Gulino A., Han C., Isabella O., Mazzarella L., Montes A., Paul Procel, Spitaleri L., Tijssen M., Yang G., Zeman M., Zhang X., Zhao Y.Fuentes:scopusErratum: Realizing the potential of RF-sputtered hydrogenated fluorine-doped indium oxide as an electrode material for ultrathin SiO<inf>x</inf>/poly-si passivating contacts (ACS Applied Energy Materials (2020) 3:9 (8606-8618) DOI: 10.1021/acsaem.0c01206)
OtherAbstract: The authors inadvertently misreported the order of magnitude of the TCO deposition pressure, for whiPalabras claves:Autores:Eijt S., Han C., Isabella O., Mazzarella L., Montes A., Paul Procel, Schut H., Yang G., Zeman M., Zhang X., Zhao Y.Fuentes:scopusOn current collection from supporting layers in perovskite/c-Si tandem solar cells
Conference ObjectAbstract: The study of a two-terminal (2T) perovskite/c-Si tandem solar cell requires accurate and concurrentPalabras claves:crystalline silicon, current collection, Perovskite, tandem, TCAD SentaurusAutores:Isabella O., Paul Procel, Santbergen R., Singh M., Syifai I., Van Heerden R., Weeber A., Zeman M.Fuentes:scopusRoom-temperature sputtered tungsten-doped indium oxide for improved current in silicon heterojunction solar cells
ArticleAbstract: The window layers limit the performance of silicon heterojunction (SHJ) solar cells with front and bPalabras claves:Improved near-infrared response, Room temperature transparent electrode, Silicon heterojunction solar cell, Tungsten-doped indium oxideAutores:Han C., Isabella O., Mazzarella L., Montes A., Paul Procel, Santbergen R., Yang G., Zeman M., Zhang X., Zhao Y.Fuentes:scopusStrategy to mitigate the dipole interfacial states in (i)a-Si:H/MoO<inf>x</inf> passivating contacts solar cells
ArticleAbstract: Molybdenum oxide (MoOx) is attractive for applications as hole-selective contact in silicon heterojuPalabras claves:(i)a-Si:H/MoO hole transport contact x, interfacial dipole layer, plasma treatment, TCAD electrical modelingAutores:Alcañiz A., Han C., Isabella O., Kawa E., Mazzarella L., Paul Procel, Taheri P., Tiringer U., Yang G., Zeman M., Zhao Y.Fuentes:scopus