Lattice Dynamics of 4H-SiC by Inelastic X-Ray Scattering

Conference Object

Abstract: We have measured the phonon dispersion relations in 4H-SiC by inelastic x-ray scattering (IXS) using

Palabras claves:

4H Silicon Carbide, Inelastic X-ray scattering, Phonon Dispersion Relations

Autores:

Cardona M., Choyke W.J., Jorge Serrano, Lorenzen M., Pavone P., Requardt H., Schwoerer-Böhning M., Stojetz B., Strempfer J.

Fuentes:

scopus