Lattice Dynamics of 4H-SiC by Inelastic X-Ray Scattering

Abstract:

We have measured the phonon dispersion relations in 4H-SiC by inelastic x-ray scattering (IXS) using monochromatized synchrotron radiation. The q-space directions Γ-K-M, Γ-M, and Γ-A were mapped out. Lattice dynamical calculations that allowed the pbkp_rediction of phonon eigenvectors, as well as their symmetries, also helped in choosing the best scattering geometries. The IXS phonon data are compared with those previously obtained from low temperature photoluminescence measurements and from laser Raman spectroscopy.

Año de publicación:

2003

Keywords:

• Phonon Dispersion Relations
• 4H Silicon Carbide
• Inelastic X-ray scattering

Fuente:

scopus