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Evidence of the robustness of a cots soft-error free SRAM to Neutron Radiation
ArticleAbstract: Radiation tests with 15-MeV neutrons were performed in a COTS SRAM including a new memory cell desigPalabras claves:Cots, LPSRAM, MUSCA SEP3, neutron tests, radiation hardness, reliability, Soft error, SRAMAutores:Baylac M., Clemente J.A., Francesca Villa, Franco F.J., Hubert G., Mansour W., Palomar C., Rey S., Rosetto O., Velazco R.Fuentes:scopusSensitivity Characterization of a COTS 90-nm SRAM at Ultralow Bias Voltage
ArticleAbstract: This paper presents the characterization of the sensitivity to 14-MeV neutrons of a commercial off-tPalabras claves:Cots, low-bias voltage, neutron tests, radiation hardness, reliability, Soft error, static random access memory (SRAM)Autores:Baylac M., Clemente J.A., Francesca Villa, Franco F.J., Hubert G., Mecha H., Puchner H., Velazco R.Fuentes:scopusSingle events in a COTS soft-error free SRAM at low bias voltage induced by 15-MeV neutrons
ArticleAbstract: This paper presents an experimental study of the sensitivity to 15-MeV neutrons of Advanced Low PowePalabras claves:Cots, LPSRAM, neutron tests, radiation hardness, reliability, Soft error, SRAMAutores:Agapito J.A., Baylac M., Clemente J.A., Francesca Villa, Franco F.J., Mecha H., Pablo F. Ramos, PABLO FRANCISCO RAMOS VARGAS, VANESSA CAROLINA VARGAS VALLEJO, Vanessa Vargas, Velazco R.Fuentes:googlescopusSEU Characterization of Three Successive Generations of COTS SRAMs at Ultralow Bias Voltage to 14.2-MeV Neutrons
ArticleAbstract: This paper presents a single event upset (SEU) sensitivity characterization at ultralow bias voltagePalabras claves:Commercial off-the-shelf (COTS), low bias voltage, neutron tests, radiation hardness, reliability, Soft error, static random access memories (SRAM)Autores:Baylac M., Clemente J.A., Fraire J., Francesca Villa, Franco F.J., Hubert G., Mecha H., Puchner H., Rey S., Velazco R.Fuentes:scopusStatistical Anomalies of Bitflips in SRAMs to Discriminate SBUs from MCUs
ArticleAbstract: Recently, the occurrence of multiple events in static tests has been investigated by checking the stPalabras claves:Multiple cell upsets, neutron tests, Single Event Upsets, SRAMsAutores:Agapito J.A., Baylac M., Clemente J.A., Francesca Villa, Franco F.J., Hubert G., Mecha H., Puchner H., Rey S., Velazco R.Fuentes:scopusStatistical Deviations from the Theoretical Only-SBU Model to Estimate MCU Rates in SRAMs
ArticleAbstract: This paper addresses a well-known problem that occurs when memories are exposed to radiation: the dePalabras claves:Multiple cell upsets (MCUs), single bit upsets (SBUs), single events, soft errors, static random access memories (SRAMs)Autores:Agapito J.A., Baylac M., Clemente J.A., Francesca Villa, Franco F.J., Hubert G., Mecha H., Puchner H., Rey S., Velazco R.Fuentes:scopus