Sensitivity Characterization of a COTS 90-nm SRAM at Ultralow Bias Voltage

Abstract:

This paper presents the characterization of the sensitivity to 14-MeV neutrons of a commercial off-the-shelf 90-nm static random access memories manufactured by Cypress Semiconductor, when biased at ultralow voltage. First, experiments exposing this memory at 14-MeV neutrons, when powering it up at bias voltages ranging from 0.5 to 3.3 V, are presented and discussed. These results are in good concordance with theoretical pbkp_redictions issued by the modeling tool MUlti-SCAles Single Event Phenomena Pbkp_redictive Platform. Then, this tool has been used to obtain soft error rate pbkp_redictions at different altitudes above the Earth's surface of this device versus its bias voltage. Finally, the effect of contamination by α particles has also been estimated at said range of bias voltages.

Año de publicación:

2017

Keywords:

• Soft error
• low-bias voltage
• reliability
• neutron tests
• static random access memory (SRAM)
• radiation hardness
• Cots

Fuente:

scopus