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Background impurities and a delta-doped QW. Part I: Center doping
ArticleAbstract: The influence of shallow background donor impurities on the energy characteristics of the SiGe/Si/SiPalabras claves:Impurity binding energy, Modulation doping, self-consistent calculation, semiconductor quantum wellsAutores:Akimov V., David Laroze, Demediuk R., Duque C.A., Kovalov V., Morales A.L., Sushchenko D., Tiutiunnyk A., Tulupenko V.Fuentes:scopusBackground impurities in a delta-doped QW. Part II: Edge doping
ArticleAbstract: This is the second part of our study of the background impurity influence on the intersubband energyPalabras claves:Impurity binding energy, Modulation doping, Quantum well, self-consistent methodAutores:Akimov V., David Laroze, Demediuk R., Duque C.A., Kovalov V., Morales A.L., Sushchenko D., Tiutiunnyk A., Tulupenko V.Fuentes:scopusFirst Study on the Electronic and Donor Atom Properties of the Ultra-Thin Nanoflakes Quantum Dots
ArticleAbstract: Nanoflakes ultra-thin quantum dots are theoretically studied as innovative nanomaterials deliveringPalabras claves:Binding energy, Donor impurity, Ground state energy, Nanoflakes, Ultra-thin quantum dotAutores:Belamkadem L., Boussetta R., Chnafi M., David Laroze, Duque C.A., Kasapoglu E., Laura M. Pérez, Meziani Y.M., Mommadi O., Moussaouy A.E., Tulupenko V., Vinasco J.A.Fuentes:scopusElectronic and thermal properties of Biphenyl molecules
ArticleAbstract: Transport properties of a single Biphenyl molecule coupled to two contacts are studied. We characterPalabras claves:density of states, Green's functions, ThermopowerAutores:David Laroze, Duque C.A., Medina F.G., Ojeda J.H.Fuentes:scopusElectronic properties and hydrogenic impurity binding energy of a new variant quantum dot
ArticleAbstract: In this work, we have studied the electronic states with and without a donor impurity positioned onPalabras claves:Binding energy, Donor impurity, Finite difference method, Ground state energy, Variant quantum dotAutores:Belamkadem L., Chnafi M., David Laroze, Duque C.A., Mommadi O., Moussaouy A.E., Vinasco J.A.Fuentes:scopusElectronic structure of vertically coupled quantum dot-ring heterostructures under applied electromagnetic probes. A finite-element approach
ArticleAbstract: We theoretically investigate the electron and hole states in a semiconductor quantum dot-quantum rinPalabras claves:Autores:David Laroze, Duque C.A., Heyn C., Hieu N.N., Mora-Ramos M.E., Morales A.L., Ojeda J.H., Phuc H.V., Radu A., Restrepo R.L., Tulupenko V., Vinasco J.A.Fuentes:scopusElectronic, Optical, and Magnetic Properties of Doped Triangular MoS<inf>2</inf> Quantum Dots: A Density Functional Theory Approach
ArticleAbstract: A theoretical investigation on electronic states in triangular MoS2 quantum dots of different sizesPalabras claves:density functional theory, Doping, MoS 2, quantum dotsAutores:Bertel R., Correa J.D., David Laroze, Duque C.A., Martínez-Orozco J.C., Mora-Ramos M.E., Morales A.L., Nava-Maldonado F.M., Restrepo R.L., Tiutiunnyk A.Fuentes:scopusElectron–phonon interaction in quantum transport through quantum dots and molecular systems
ArticleAbstract: The quantum transport and effects of decoherence properties are studied in quantum dots systems andPalabras claves:Decoherence, Green's functions, Molecular and quantum systems, Shot noiseAutores:David Laroze, Duque C.A., Ojeda J.H.Fuentes:scopusExciton states in conical quantum dots under applied electric and magnetic fields
ArticleAbstract: Using the effective mass and parabolic band approximations, and the finite element method, we calculPalabras claves:Cone-shaped quantum dot, Coulomb energy, Electric and magnetic field, Exciton lifetime, Exciton states, Quantum ringsAutores:David Laroze, Duque C.A., Heyn C., Hieu N.N., Mora-Ramos M.E., Morales A.L., Ojeda J.H., Phuc H.V., Radu A., Restrepo R.L., Tulupenko V., Vinasco J.A.Fuentes:scopusDonor-impurity related photoionization cross section in GaAs / Ga 1 <inf>-c</inf><sup>do</sup>uble quantum rings: Effects of geometry and hydrostatic pressure
ArticleAbstract: The donor-impurity related photoionization cross section in GaAs/Ga1 -xAlxAs three-dimensional concePalabras claves:Binding energy, Double quantum ring, Hydrostatic pressure, Photoionization cross sectionAutores:Baghramyan H.M., Barseghyan M.G., David Laroze, Duque C.A., Kirakosyan A.A.Fuentes:scopus