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Background impurities and a delta-doped QW. Part I: Center doping
ArticleAbstract: The influence of shallow background donor impurities on the energy characteristics of the SiGe/Si/SiPalabras claves:Impurity binding energy, Modulation doping, self-consistent calculation, semiconductor quantum wellsAutores:Akimov V., David Laroze, Demediuk R., Duque C.A., Kovalov V., Morales A.L., Sushchenko D., Tiutiunnyk A., Tulupenko V.Fuentes:scopusBackground impurities in a delta-doped QW. Part II: Edge doping
ArticleAbstract: This is the second part of our study of the background impurity influence on the intersubband energyPalabras claves:Impurity binding energy, Modulation doping, Quantum well, self-consistent methodAutores:Akimov V., David Laroze, Demediuk R., Duque C.A., Kovalov V., Morales A.L., Sushchenko D., Tiutiunnyk A., Tulupenko V.Fuentes:scopusFirst Study on the Electronic and Donor Atom Properties of the Ultra-Thin Nanoflakes Quantum Dots
ArticleAbstract: Nanoflakes ultra-thin quantum dots are theoretically studied as innovative nanomaterials deliveringPalabras claves:Binding energy, Donor impurity, Ground state energy, Nanoflakes, Ultra-thin quantum dotAutores:Belamkadem L., Boussetta R., Chnafi M., David Laroze, Duque C.A., Kasapoglu E., Laura M. Pérez, Meziani Y.M., Mommadi O., Moussaouy A.E., Tulupenko V., Vinasco J.A.Fuentes:scopusElectronic and thermal properties of Biphenyl molecules
ArticleAbstract: Transport properties of a single Biphenyl molecule coupled to two contacts are studied. We characterPalabras claves:density of states, Green's functions, ThermopowerAutores:David Laroze, Duque C.A., Medina F.G., Ojeda J.H.Fuentes:scopusElectronic properties and hydrogenic impurity binding energy of a new variant quantum dot
ArticleAbstract: In this work, we have studied the electronic states with and without a donor impurity positioned onPalabras claves:Binding energy, Donor impurity, Finite difference method, Ground state energy, Variant quantum dotAutores:Belamkadem L., Chnafi M., David Laroze, Duque C.A., Mommadi O., Moussaouy A.E., Vinasco J.A.Fuentes:scopusElectronic, Optical, and Magnetic Properties of Doped Triangular MoS<inf>2</inf> Quantum Dots: A Density Functional Theory Approach
ArticleAbstract: A theoretical investigation on electronic states in triangular MoS2 quantum dots of different sizesPalabras claves:density functional theory, Doping, MoS 2, quantum dotsAutores:Bertel R., Correa J.D., David Laroze, Duque C.A., Martínez-Orozco J.C., Mora-Ramos M.E., Morales A.L., Nava-Maldonado F.M., Restrepo R.L., Tiutiunnyk A.Fuentes:scopusDonor-impurity related photoionization cross section in GaAs / Ga 1 <inf>-c</inf><sup>do</sup>uble quantum rings: Effects of geometry and hydrostatic pressure
ArticleAbstract: The donor-impurity related photoionization cross section in GaAs/Ga1 -xAlxAs three-dimensional concePalabras claves:Binding energy, Double quantum ring, Hydrostatic pressure, Photoionization cross sectionAutores:Baghramyan H.M., Barseghyan M.G., David Laroze, Duque C.A., Kirakosyan A.A.Fuentes:scopusEffects of applied lateral electric field and hydrostatic pressure on the intraband optical transitions in a GaAs / Ga 1 <inf>-x</inf><sup>Alx</sup>As quantum ring
ArticleAbstract: In this paper the simultaneous effects of applied lateral electric field and hydrostatic pressure onPalabras claves:electric field, Hydrostatic pressure, Intraband absorption coefficient, Quantum ringAutores:Barseghyan M.G., David Laroze, Duque C.A., Kirakosyan A.A., Manaselyan A.Fuentes:scopusHydrostatic pressure and temperature effects on spectrum of an off-center single dopant in a conical quantum dot with spherical edge
ArticleAbstract: In this paper we have studied the spectrum of an off-center donor impurity confined in the GaAs coniPalabras claves:Conical quantum dot with spherical edge, Diamagnetic susceptibility, Dipole moment, Hydrostatic pressure, Impurity binding energy, TEMPERATUREAutores:Belamkadem L., Boussetta R., Chnafi M., David Laroze, Duque C.A., El Hadi M., Falyouni F., Mommadi O., Mora-Rey F., Moussaouy A.E., Vinasco J.A.Fuentes:scopusOptical properties and conductivity of biased GaAs quantum dots
ArticleAbstract: We report the intraband optical absorption influence on the tunneling currents in biased gallium arsPalabras claves:absorption coefficient, Electrical conductivity, Intraband transitions, quantum dots, Tunnel effectAutores:Aqiqi S., David Laroze, Duque C.A., Gil-Corrales J.A., Morales A.L., Radu A., Vinasco J.A.Fuentes:scopus