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Physica E: Low-Dimensional Systems and Nanostructures(2)
2022 IEEE 41st International Conference on Electronics and Nanotechnology, ELNANO 2022 - Proceedings(1)
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scopus(7)
Background impurities and a delta-doped QW. Part I: Center doping
ArticleAbstract: The influence of shallow background donor impurities on the energy characteristics of the SiGe/Si/SiPalabras claves:Impurity binding energy, Modulation doping, self-consistent calculation, semiconductor quantum wellsAutores:Akimov V., David Laroze, Demediuk R., Duque C.A., Kovalov V., Morales A.L., Sushchenko D., Tiutiunnyk A., Tulupenko V.Fuentes:scopusDonor-impurity related photoionization cross section in GaAs / Ga 1 <inf>-c</inf><sup>do</sup>uble quantum rings: Effects of geometry and hydrostatic pressure
ArticleAbstract: The donor-impurity related photoionization cross section in GaAs/Ga1 -xAlxAs three-dimensional concePalabras claves:Binding energy, Double quantum ring, Hydrostatic pressure, Photoionization cross sectionAutores:Baghramyan H.M., Barseghyan M.G., David Laroze, Duque C.A., Kirakosyan A.A.Fuentes:scopusEffects of intense laser field and position dependent effective mass in Razavy quantum wells and quantum dots
ArticleAbstract: Using the effective mass and parabolic band approximations, we investigated the position-dependent ePalabras claves:Intense laser field, Position dependent effective mass, Razavy quantum dot, Razavy quantum wellAutores:David Laroze, Duque C.A., Kasapoglu E., Sari H., Sökmen I., Vinasco J.A.Fuentes:scopusIntersubband Energy Differences of Delta-Doped Quantum Wells in External Electric Field
Conference ObjectAbstract: The energy differences between subbands of a semiconductor quantum well delta-doped inside the wellPalabras claves:electric field, Modulation doping, shallow impurity, SiGe quantum wellsAutores:Akimov V., David Laroze, Demediuk R., Duque C.A., Fomina O., Morales A.L., Sushchenko D., Tiutiunnyk A., Tulupenko V.Fuentes:scopusTunneling influence on the intersubband optical absorption coefficient and refraction index in biased GaAs/AlGaAs quantum well wires
ArticleAbstract: We investigate the tunnel effect influence on the intersubband optical absorption and refraction inPalabras claves:absorption coefficient, electric field, Intersubband transition, Quantum well wire, Refraction index, SEMICONDUCTOR, Tunnel effectAutores:Aqiqi S., David Laroze, Duque C.A., Radu A., Vinasco J.A.Fuentes:scopusRevisiting the adiabatic approximation for bound states calculation in axisymmetric and asymmetrical quantum structures
ArticleAbstract: The Schrödinger equation in the effective mass approximation is commonly used to calculate the electPalabras claves:Adiabatic approximation, Excited levels, Finite Element Method, quantum dots, Quantum rings, symmetryAutores:David Laroze, Duque C.A., Feddi E.M., Mora-Ramos M.E., Morales A.L., Radu A., Restrepo R.L., Tiutiunnyk A., Vinasco J.A.Fuentes:scopusPyramidal core-shell quantum dot under applied electric and magnetic fields
ArticleAbstract: We have theoretically investigated the electronic states in a core/shell pyramidal quantum dot withPalabras claves:Autores:Caicedo-Paredes D., David Laroze, Duque C.A., Hieu N.N., Martínez-Orozco J.C., Mora-Ramos M.E., Morales A.L., Osorio J.A., Phuc H.V., Radu A., Restrepo R.L., Tiutiunnyk A., Vinasco J.A.Fuentes:scopus