Sensitivity Characterization of a COTS 90-nm SRAM at Ultralow Bias Voltage

Article

Abstract: This paper presents the characterization of the sensitivity to 14-MeV neutrons of a commercial off-t

Palabras claves:

Cots, low-bias voltage, neutron tests, radiation hardness, reliability, Soft error, static random access memory (SRAM)

Autores:

Baylac M., Clemente J.A., Francesca Villa, Franco F.J., Hubert G., Mecha H., Puchner H., Velazco R.

Fuentes:

scopus