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Sensitivity Characterization of a COTS 90-nm SRAM at Ultralow Bias Voltage
ArticleAbstract: This paper presents the characterization of the sensitivity to 14-MeV neutrons of a commercial off-tPalabras claves:Cots, low-bias voltage, neutron tests, radiation hardness, reliability, Soft error, static random access memory (SRAM)Autores:Baylac M., Clemente J.A., Francesca Villa, Franco F.J., Hubert G., Mecha H., Puchner H., Velazco R.Fuentes:scopusStatistical Deviations from the Theoretical Only-SBU Model to Estimate MCU Rates in SRAMs
ArticleAbstract: This paper addresses a well-known problem that occurs when memories are exposed to radiation: the dePalabras claves:Multiple cell upsets (MCUs), single bit upsets (SBUs), single events, soft errors, static random access memories (SRAMs)Autores:Agapito J.A., Baylac M., Clemente J.A., Francesca Villa, Franco F.J., Hubert G., Mecha H., Puchner H., Rey S., Velazco R.Fuentes:scopus