Mostrando 3 resultados de: 3
Publisher
IEEE Transactions on Nuclear Science(2)
LATS 2016 - 17th IEEE Latin-American Test Symposium(1)
A deep analysis of SEU consequences in the internal memory of LEON3 processor
Conference ObjectAbstract: This paper presents an analysis of the effects of Single Event Upset (SEU) into the internal memoryPalabras claves:Autores:Bouesse F., Hadj W.E., Kchaou A., Pablo F. Ramos, PABLO FRANCISCO RAMOS VARGAS, Tourki R., Velazco R.Fuentes:googlescopusStatistical Anomalies of Bitflips in SRAMs to Discriminate SBUs from MCUs
ArticleAbstract: Recently, the occurrence of multiple events in static tests has been investigated by checking the stPalabras claves:Multiple cell upsets, neutron tests, Single Event Upsets, SRAMsAutores:Agapito J.A., Baylac M., Clemente J.A., Francesca Villa, Franco F.J., Hubert G., Mecha H., Puchner H., Rey S., Velazco R.Fuentes:scopusStatistical Deviations from the Theoretical Only-SBU Model to Estimate MCU Rates in SRAMs
ArticleAbstract: This paper addresses a well-known problem that occurs when memories are exposed to radiation: the dePalabras claves:Multiple cell upsets (MCUs), single bit upsets (SBUs), single events, soft errors, static random access memories (SRAMs)Autores:Agapito J.A., Baylac M., Clemente J.A., Francesca Villa, Franco F.J., Hubert G., Mecha H., Puchner H., Rey S., Velazco R.Fuentes:scopus