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Article(5)
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IEEE Transactions on Nanotechnology(2)
IEEE Magnetics Letters(1)
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IEEE Transactions on Magnetics(1)
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scopus(5)
Compact Modeling of Perpendicular STT-MTJs with Double Reference Layers
ArticleAbstract: This paper shows the steps to set up a simulation framework for perpendicular spin-transfer torque (Palabras claves:compact model, Double-barrier MTJ, non-volatile flip-flop (NVFF), STT switchingAutores:Carpentieri M., Crupi F., D'Aquino M., Finocchio G., Marco Lanuzza, Rose R.D.Fuentes:scopusA Compact Model with Spin-Polarization Asymmetry for Nanoscaled Perpendicular MTJs
ArticleAbstract: The aim of this paper is to introduce a compact model for perpendicular spin-transfer torque (STT)-mPalabras claves:compact model, Magnetic tunnel junction (MTJ), spin-transfer torque (STT), STT-magnetic random access memory (MRAM), technology scalingAutores:Carangelo G., Carpentieri M., Crupi F., D'Aquino M., Finocchio G., Marco Lanuzza, Rose R.D.Fuentes:scopusField-Free Magnetic Tunnel Junction for Logic Operations Based on Voltage-Controlled Magnetic Anisotropy
ArticleAbstract: This letter demonstrates how to perform logic operations on the data stored in magnetic tunnel junctPalabras claves:logic operation, magnetic tunnel junction, micromagnetism, Spin electronicsAutores:Carpentieri M., Cutugno F., Esteban Garzón, Finocchio G., Marco Lanuzza, Rose R.D.Fuentes:scopusSimulation Analysis of DMTJ-Based STT-MRAM Operating at Cryogenic Temperatures
ArticleAbstract: This article investigates spin-transfer torque magnetic random access memories (STT-MRAMs) based onPalabras claves:77 K, compact model, Cryogenic computing, double-barrier magnetic tunnel junction (DMTJ), spin-transfer torque magnetic random access memory (STT-MRAM)Autores:Carpentieri M., Crupi F., Esteban Garzón, Marco Lanuzza, Rose R.D., Teman A.Fuentes:scopusVariability-Aware Analysis of Hybrid MTJ/CMOS Circuits by a Micromagnetic-Based Simulation Framework
ArticleAbstract: Magnetic tunnel junctions (MTJs) are attracting an increasing interest due to their potentiality forPalabras claves:hybrid MTJ/CMOS circuits, Magnetic tunnel junction (MTJ), spintronicsAutores:Carpentieri M., Crupi F., Finocchio G., Marco Lanuzza, Rose R.D., Siracusano G., Tomasello R.Fuentes:scopus