Field-Free Magnetic Tunnel Junction for Logic Operations Based on Voltage-Controlled Magnetic Anisotropy


Abstract:

This letter demonstrates how to perform logic operations on the data stored in magnetic tunnel junction (MTJ) devices within a memory array, without any intermediate electronic circuitry. The basic structure consists of one MTJ, exhibiting voltage-controlled magnetic anisotropy, in series connection with a MOSFET access device. The material implication and not logic operations can be performed without any external magnetic field by supplying a proper bias voltage to the circuit structure. This innovative solution enables higher energy-delay efficiency and better integration density than conventional CMOS-based computational architectures.

Año de publicación:

2021

Keywords:

  • Spin electronics
  • micromagnetism
  • logic operation
  • magnetic tunnel junction

Fuente:

scopusscopus

Tipo de documento:

Article

Estado:

Acceso abierto

Áreas de conocimiento:

  • Campo magnético

Áreas temáticas:

  • Física aplicada