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Heteroepitaxial growth of two-dimensional hexagonal boron nitride templated by graphene edges
ArticleAbstract: By adapting the concept of epitaxy to two-dimensional space, we show the growth of a single-atomic-lPalabras claves:Autores:Clark K., Deng W., Gu G., Idrobo J.C., Leonardo Basile, Li A.P., Liu L., McCarty K., Park J., Siegel D.Fuentes:googlescopusIsoelectronic Tungsten Doping in Monolayer MoSe<inf>2</inf>for Carrier Type Modulation
ArticleAbstract:Palabras claves:alloys, carrier type modulation, isoelectronic, Mo W Se 1- x x 2, p−n homojunctionsAutores:Chang L.Y., Chen C.H., Geohegan D.B., Hus S.M., Idrobo J.C., Kuo Y.C., Lee J., Leonardo Basile, Li A.P., Li X., Lin M.W., Puretzky A.A., Rouleau C.M., Wang K., Xiao K.Fuentes:googlescopus