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IEEE Transactions on Circuits and Systems I: Regular Papers(1)
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SMACD 2017 - 14th International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design(1)
SMACD 2019 - 16th International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design, Proceedings(1)
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Física aplicada(4)
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scopus(4)
Assessment of STT-MRAMs based on double-barrier MTJs for cache applications by means of a device-to-system level simulation framework
ArticleAbstract: This paper explores non-volatile cache memories implemented by spin-transfer torque magnetic randomPalabras claves:cache memory, Device-to-system simulation framework, double-barrier magnetic tunnel junction (DMTJ), FinFET, STT-MRAMAutores:Carpentieri M., Crupi F., Esteban Garzón, Finocchio G., Marco Lanuzza, Rose R.D., Trojman L.Fuentes:scopusA Variation-Aware Timing Modeling Approach for Write Operation in Hybrid CMOS/STT-MTJ Circuits
ArticleAbstract: In this paper, a variation-aware simulation framework for hybrid circuits comprising MOS transistorsPalabras claves:device-circuit simulation, process variability, Spintronic circuits, stochastic switching, STT-MRAMAutores:Alioto M., Carpentieri M., Crupi F., Finocchio G., Marco Lanuzza, Rose R.D., Siracusano G., Tomasello R.Fuentes:scopusExploiting Double-Barrier MTJs for Energy-Efficient Nanoscaled STT-MRAMs
Conference ObjectAbstract: This paper explores performance and technology-scalability of STT-MRAMs exploiting double-barrier MTPalabras claves:double-barrier magnetic tunnel junction (DMTJ), FinFET, STT-MRAM, technology-voltage scalingAutores:Carpentieri M., Crupi F., Esteban Garzón, Finocchio G., Marco Lanuzza, Rose R.D., Trojman L.Fuentes:scopusImpact of voltage scaling on STT-MRAMs through a variability-aware simulation framework
Conference ObjectAbstract: In this paper, we focus on the study of the impact of voltage scaling on writing performance and enePalabras claves:Magnetic tunnel junction (MTJ), Modeling, STT-MRAM, variability, voltage scalingAutores:Carangelo G., Carpentieri M., Crupi F., Finocchio G., Marco Lanuzza, Rose R.D.Fuentes:scopus