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Compact Modeling of Perpendicular STT-MTJs with Double Reference Layers
ArticleAbstract: This paper shows the steps to set up a simulation framework for perpendicular spin-transfer torque (Palabras claves:compact model, Double-barrier MTJ, non-volatile flip-flop (NVFF), STT switchingAutores:Carpentieri M., Crupi F., D'Aquino M., Finocchio G., Marco Lanuzza, Rose R.D.Fuentes:scopusAssessment of STT-MRAMs based on double-barrier MTJs for cache applications by means of a device-to-system level simulation framework
ArticleAbstract: This paper explores non-volatile cache memories implemented by spin-transfer torque magnetic randomPalabras claves:cache memory, Device-to-system simulation framework, double-barrier magnetic tunnel junction (DMTJ), FinFET, STT-MRAMAutores:Carpentieri M., Crupi F., Esteban Garzón, Finocchio G., Marco Lanuzza, Rose R.D., Trojman L.Fuentes:scopusA Compact Model with Spin-Polarization Asymmetry for Nanoscaled Perpendicular MTJs
ArticleAbstract: The aim of this paper is to introduce a compact model for perpendicular spin-transfer torque (STT)-mPalabras claves:compact model, Magnetic tunnel junction (MTJ), spin-transfer torque (STT), STT-magnetic random access memory (MRAM), technology scalingAutores:Carangelo G., Carpentieri M., Crupi F., D'Aquino M., Finocchio G., Marco Lanuzza, Rose R.D.Fuentes:scopusA Low-Energy DMTJ-Based Ternary Content- Addressable Memory With Reliable Sub-Nanosecond Search Operation
ArticleAbstract: In this paper, we propose an energy-efficient, reliable, hybrid, 10-transistor/2-Double-Barrier-MagnPalabras claves:Double-barrier MTJ, energy-efficiency, Low-power, non-volatile TCAM (NV-TCAM)Autores:Carpentieri M., Esteban Garzón, Finocchio G., Marco Lanuzza, Teman A., Yavits L.Fuentes:scopusA Variation-Aware Timing Modeling Approach for Write Operation in Hybrid CMOS/STT-MTJ Circuits
ArticleAbstract: In this paper, a variation-aware simulation framework for hybrid circuits comprising MOS transistorsPalabras claves:device-circuit simulation, process variability, Spintronic circuits, stochastic switching, STT-MRAMAutores:Alioto M., Carpentieri M., Crupi F., Finocchio G., Marco Lanuzza, Rose R.D., Siracusano G., Tomasello R.Fuentes:scopusA variation-aware simulation framework for hybrid CMOS/spintronic circuits
Conference ObjectAbstract: In this paper, a variation-aware simulation framework is introduced for hybrid circuits comprising MPalabras claves:device-circuit simulation, magnetic memory, Spintronic circuits, variationsAutores:Alioto M., Carpentieri M., Crupi F., Finocchio G., Marco Lanuzza, Rose R.D., Siracusano G., Tomasello R.Fuentes:scopusExploiting Double-Barrier MTJs for Energy-Efficient Nanoscaled STT-MRAMs
Conference ObjectAbstract: This paper explores performance and technology-scalability of STT-MRAMs exploiting double-barrier MTPalabras claves:double-barrier magnetic tunnel junction (DMTJ), FinFET, STT-MRAM, technology-voltage scalingAutores:Carpentieri M., Crupi F., Esteban Garzón, Finocchio G., Marco Lanuzza, Rose R.D., Trojman L.Fuentes:scopusField-Free Magnetic Tunnel Junction for Logic Operations Based on Voltage-Controlled Magnetic Anisotropy
ArticleAbstract: This letter demonstrates how to perform logic operations on the data stored in magnetic tunnel junctPalabras claves:logic operation, magnetic tunnel junction, micromagnetism, Spin electronicsAutores:Carpentieri M., Cutugno F., Esteban Garzón, Finocchio G., Marco Lanuzza, Rose R.D.Fuentes:scopusImpact of Scaling on Physical Unclonable Function Based on Spin-Orbit Torque
ArticleAbstract: We analyze the scalability of a spin-orbit torque random access memory (SOT-MRAM)-based physical uncPalabras claves:CMOS/spintronic circuit, micromagnetics, physical unclonable function, Spin electronics, spin-orbit torque random access memory, three-Terminal devicesAutores:Carpentieri M., Chiappini S., Crupi F., Finocchio G., Marco Lanuzza, Puliafito V., Rose R.D.Fuentes:scopusImpact of voltage scaling on STT-MRAMs through a variability-aware simulation framework
Conference ObjectAbstract: In this paper, we focus on the study of the impact of voltage scaling on writing performance and enePalabras claves:Magnetic tunnel junction (MTJ), Modeling, STT-MRAM, variability, voltage scalingAutores:Carangelo G., Carpentieri M., Crupi F., Finocchio G., Marco Lanuzza, Rose R.D.Fuentes:scopus