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A variation-aware simulation framework for hybrid CMOS/spintronic circuits

Abstract:

In this paper, a variation-aware simulation framework is introduced for hybrid circuits comprising MOS transistors and spintronic devices (e.g., magnetic tunnel junction-MTJ). The simulation framework is based on one-time characterization via micromagnetic multi-domain simulations, as opposed to most of existing frameworks based on single-domain analysis. As further distinctive capability, stochastic variations of the MTJ switching are explicitly incorporated through a Skew Normal distribution, which is adjusted to fit micromagnetic simulations. The framework is implemented in the form of Verilog-A look-up table based model, which assures easy integration with commercial circuit design tools, and very low computational effort. The framework is applied to non-volatile Flip-FIops as case study with 10,000 Monte Carlo runs.