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Conference Object(2)
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Materials Science Forum(2)
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scopus(2)
Phonons in SiC from INS, IXS, and Ab-initio calculations
Conference ObjectAbstract: Preliminary results for the phonon dispersion curves of hexagonal 4H-SiC from experimental inelasticPalabras claves:3C-SiC, 4H-SiC, Ab initio calculation, Inelastic neutron scattering, Inelastic X-ray scattering, Phonon dispersion, Scattering intensityAutores:Bosak A., Choyke W.J., Dorner B., Ivanov A., Jorge Serrano, Krisch M., Malorny M., Stojetz B., Strauch D.Fuentes:scopusLattice Dynamics of 4H-SiC by Inelastic X-Ray Scattering
Conference ObjectAbstract: We have measured the phonon dispersion relations in 4H-SiC by inelastic x-ray scattering (IXS) usingPalabras claves:4H Silicon Carbide, Inelastic X-ray scattering, Phonon Dispersion RelationsAutores:Cardona M., Choyke W.J., Jorge Serrano, Lorenzen M., Pavone P., Requardt H., Schwoerer-Böhning M., Stojetz B., Strempfer J.Fuentes:scopus