Mostrando 5 resultados de: 5
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AEIT Annual Conference 2013: Innovation and Scientific and Technical Culture for Development, AEIT 2013 - Selected Proceedings Papers(2)
European Solid-State Device Research Conference(1)
IEEE Transactions on Industrial Electronics(1)
PCIM Europe Conference Proceedings(1)
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Electricidad y electrónica(1)
Ingeniería y operaciones afines(1)
Otras ramas de la ingeniería(1)
Characterization and Modeling of BTI in SiC MOSFETs
Conference ObjectAbstract: SiC power MOSFETs have been investigated by performing two different kinds of measurements, the hystPalabras claves:Autores:Consentino G., Cornigli D., Crupi F., Fiegna C., Reggiani S., Sánchez Luis, Sangiorgi E., Tallarico A.N., Valdivieso C.Fuentes:scopusA New Effective Methodology for Semiconductor Power Devices HTRB Testing
ArticleAbstract: An advanced high-temperature reverse bias (HTRB) testing procedure for performing reliability testsPalabras claves:High-temperature reverse bias (HTRB), instrumentation, Power devices, reliability, thermal runawayAutores:Consentino G., D'Ignoti A., Fragomeni L., Galiano S., Grimaldi A., Jorge Hernandez-Ambato, Pace C.Fuentes:googlescopusDangerous effects induced on power MOSFETs by terrestrial neutrons: A theoretical study and an empirical approach based on accelerated experimental analysis
Conference ObjectAbstract: This paper investigates the effects that terrestrial neutrons can induce on power MOSFETs when theyPalabras claves:accelerated tests, Am-Be source, power MOSFETs, reliability, SEB, SEE, SEGR, Terrestrial neutronsAutores:Consentino G., Giordano C., Jorge Hernandez-Ambato, Laudani M., Marchese N., Mazzeo M., Pace C., Parlato A., Privitera G., Tomarchio E.Fuentes:googlescopusInnovative instrumentation for HTRB tests on semiconductor power devices
Conference ObjectAbstract: An automated system designed to perform reliability tests on power transistors is reported. An innovPalabras claves:Cycles stress, HTRB, Mini-heater, Power devices, reliability, Thermal controlAutores:Consentino G., D'Ignoti A., De Pasquale D., Galiano S., Giordano C., Jorge Hernandez-Ambato, Mazzeo M., Pace C.Fuentes:googlescopusThreshold voltage instability in SiC power MOSFETs
Conference ObjectAbstract: Charge trapping and de-trapping phenomena in SiC power MOSFETs were investigated by performing two dPalabras claves:Autores:Consentino G., Crupi F., Esteban Guevara, Meneghesso G., Reggiani S., Sánchez LuisFuentes:scopus