Mostrando 2 resultados de: 2
Filtros aplicados
Subtipo de publicación
Conference Object(2)
Publisher
Asia-Pacific Microwave Conference Proceedings, APMC(1)
SBMO/IEEE MTT-S International Microwave and Optoelectronics Conference Proceedings(1)
Área temáticas
Física aplicada(2)
Origen
scopus(2)
Device level model for trapping effects in GaN and GaAs devices for broadband data communication
Conference ObjectAbstract: In this work, we propose a new non-linear equivalent circuit which is able to model the low frequencPalabras claves:Circuit modeling, FETs, memory effects, Microwave devices, pulsed measurements, Scattering parametersAutores:Guillermo Rafael-Valdivia, Mendoza T., Su Z., Urquizo A.Fuentes:scopusNonlinear device model for GaN and GaAs microwave transistors including memory effects
Conference ObjectAbstract: In this paper, a new technique for modeling GaN and GaAs transistors is presented. The technique canPalabras claves:FET, GAAS, GaN, memory effects, Microwave devices, Modeling, pulsed measurements, Scattering parametersAutores:Barbin S., Guillermo Rafael-Valdivia, Mendoza T., Urquizo A.Fuentes:scopus