Device level model for trapping effects in GaN and GaAs devices for broadband data communication

Conference Object

Abstract: In this work, we propose a new non-linear equivalent circuit which is able to model the low frequenc

Palabras claves:

Circuit modeling, FETs, memory effects, Microwave devices, pulsed measurements, Scattering parameters

Autores:

Guillermo Rafael-Valdivia, Mendoza T., Su Z., Urquizo A.

Fuentes:

scopus