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IEEE Electron Device Letters(1)
IEEE Transactions on Device and Materials Reliability(1)
Microelectronic Engineering(1)
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A Defect-Centric Analysis of the Temperature Dependence of the Channel Hot Carrier Degradation in nMOSFETs
ArticleAbstract: The defect-centric distribution is used to study the temperature dependence of channel hot carrier (Palabras claves:channel hot carrier degradation, defect-centric distribution, temperature analysisAutores:Crupi F., Franco J., Kaczer B., Luis Miguel Prócel Moya, Trojman L.Fuentes:googlescopusA Defect-Centric perspective on channel hot carrier variability in nMOSFETs
ArticleAbstract: In this work we confirm the validity of the Defect-Centric distribution for pbkp_redicting the CHC bPalabras claves:channel hot carrier degradation, defect-centric distribution, variabilityAutores:Crupi F., Franco J., Kaczer B., Luis Miguel Prócel Moya, Trojman L., Tuinhout H., Wils N.Fuentes:googlescopusDefect-centric distribution of channel hot carrier degradation in nano-MOSFETs
ArticleAbstract: The defect-centric distribution is used, for the first time, to study the channel hot carrier (CHC)Palabras claves:channel hot-carrier, defect-centric distribution, nFETAutores:Crupi F., Franco J., Kaczer B., Luis Miguel Prócel Moya, Trojman L.Fuentes:googlescopus