A Defect-Centric Analysis of the Temperature Dependence of the Channel Hot Carrier Degradation in nMOSFETs

Abstract:

The defect-centric distribution is used to study the temperature dependence of channel hot carrier (CHC) degradation in deeply scaled nMOSFETs. We analyze the temperature dependence in terms of the defect-centric parameters. The total number of traps is observed to increase with temperature, whereas the average threshold voltage shift produced by a single charged defect, i.e., η, is confirmed to be independent of the temperature, as previously shown for bias temperature instability. By using the defect-centric analysis, we estimate the activation energy of the threshold voltage shift and that of the number of charged traps per device, which are directly linked to the CHC degradation.

Año de publicación:

2016

Keywords:

• channel hot carrier degradation
• temperature analysis
• defect-centric distribution

Fuente:

google

scopus