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IEEE International Reliability Physics Symposium Proceedings(1)
Microelectronic Engineering(1)
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Física aplicada(2)
A Defect-Centric perspective on channel hot carrier variability in nMOSFETs
ArticleAbstract: In this work we confirm the validity of the Defect-Centric distribution for pbkp_redicting the CHC bPalabras claves:channel hot carrier degradation, defect-centric distribution, variabilityAutores:Crupi F., Franco J., Kaczer B., Luis Miguel Prócel Moya, Trojman L., Tuinhout H., Wils N.Fuentes:googlescopusOrigins and implications of increased channel hot carrier variability in nFinFETs
Conference ObjectAbstract: Channel hot carrier (CHC) stress is observed to result in higher variability of degradation in deeplPalabras claves:Bias Temperature Instability (BTI), Channel Hot Carriers (CHC), FinFETs, Time-Dependent VariabilityAutores:Bina M., Bury E., Chiarella T., Cho M., Crupi F., De Keersgieter A., Franco J., Grasser T., Groeseneken G., Horiguchi N., Ji Z., Kaczer B., Luis Miguel Prócel Moya, Pitner G., Putcha V., Roussel P.J., Thean A., Trojman L., Tyaginov S., Weckx P., Wimmer Y.Fuentes:googlescopus