Origins and implications of increased channel hot carrier variability in nFinFETs

Abstract:

Channel hot carrier (CHC) stress is observed to result in higher variability of degradation in deeply-scaled nFinFETs than bias temperature instability (BTI) stress. Potential sources of this increased variation are discussed and the intrinsic time-dependent variability component is extracted using a novel methodology based on matched pairs. It is concluded that in deeply-scaled devices, CHC-induced time-dependent distributions will be bimodal, pertaining to bulk charging and to interface defect generation, respectively. The latter, high-impact mode will control circuit failure fractions at high percentiles.

Año de publicación:

2015

Keywords:

• FinFETs
• Channel Hot Carriers (CHC)
• Bias Temperature Instability (BTI)
• Time-Dependent Variability

Fuente:

scopus

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