A Defect-Centric Analysis of the Temperature Dependence of the Channel Hot Carrier Degradation in nMOSFETs

Article

Abstract: The defect-centric distribution is used to study the temperature dependence of channel hot carrier (

Palabras claves:

channel hot carrier degradation, defect-centric distribution, temperature analysis

Autores:

Crupi F., Franco J., Kaczer B., Luis Miguel Prócel Moya, Trojman L.

Fuentes:

google

scopus