Mostrando 8 resultados de: 8
Publisher
IEEE Transactions on Electron Devices(3)
Solid-State Electronics(2)
2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016 - Proceedings(1)
2017 5th Berkeley Symposium on Energy Efficient Electronic Systems, E3S 2017 - Proceedings(1)
PRIME 2017 - 13th Conference on PhD Research in Microelectronics and Electronics, Proceedings(1)
Origen
scopus(8)
Assessment of InAs/AlGaSb Tunnel-FET Virtual Technology Platform for Low-Power Digital Circuits
ArticleAbstract: In this work, a complementary InAs/Al0.05Ga0.95Sb tunnel field-effect-Transistor (TFET) virtual techPalabras claves:full-Adder, III-V, tunnel field effect transistor (TFET), very large scale integration (VLSI).Autores:Crupi F., Esseni D., Marco Lanuzza, Palestri P., Selmi L., Strangio S.Fuentes:scopusBenchmarks of a III-V TFET technology platform against the 10-nm CMOS FinFET technology node considering basic arithmetic circuits
ArticleAbstract: In this work, a benchmark for low-power digital applications of a III-V TFET technology platform agaPalabras claves:Full adders, III-V, Ripple carry adders, TFETAutores:Crupi F., Esseni D., Marco Lanuzza, Palestri P., Selmi L., Strangio S.Fuentes:scopusA virtual III-V tunnel FET technology platform for ultra-low voltage comparators and level shifters
Conference ObjectAbstract: In this paper, a III-V nanowire TFET technology platform is compared against the pbkp_redictive techPalabras claves:comparator, hybrid design, level shifter, TFETAutores:Crupi F., Esseni D., Marco Lanuzza, Palestri P., Settino F., Strangio S.Fuentes:scopusEarly assessment of tunnel-FET for energy-efficient logic circuits
Conference ObjectAbstract: In this paper, we explore the potentialities of TFET-based circuits operating in the ultra-low voltaPalabras claves:Autores:Crupi F., Esseni D., Marco Lanuzza, Palestri P., Strangio S.Fuentes:scopusDigital and analog TFET circuits: Design and benchmark
ReviewAbstract: In this work, we investigate by means of simulations the performance of basic digital, analog, and mPalabras claves:Analog circuits, digital circuits, Simulation, TCAD, Tunnel-FETAutores:Crupi F., Esseni D., Marco Lanuzza, Palestri P., Selmi L., Settino F., Strangio S.Fuentes:scopusMixed Tunnel-FET/MOSFET Level Shifters: A New Proposal to Extend the Tunnel-FET Application Domain
ArticleAbstract: In this paper, we identify the level shifter (LS) for voltage up-conversion from the ultralow-voltagPalabras claves:Level shifter (LS), technology computer-Aided design (TCAD), tunnel FET (TFET).Autores:Crupi F., Esseni D., Marco Lanuzza, Palestri P., Strangio S.Fuentes:scopusUnderstanding the potential and limitations of tunnel FETs for low-voltage analog/mixed-signal circuits
ArticleAbstract: In this paper, the analog/mixed-signal performance is evaluated at device and circuit levels for a IPalabras claves:Analog circuits, Analog figures of merit, Comparators, Track and hold (T/H), tunnel FET (TFET)Autores:Crupi F., Esseni D., Marco Lanuzza, Palestri P., Selmi L., Settino F., Strangio S.Fuentes:scopusSimulations and comparisons of basic analog and digital circuit blocks employing Tunnel FETs and conventional FinFETs
Conference ObjectAbstract: In the past decade the Tunnel Field Effect Transistor (TFET) relying on band-To-band tunneling (BTBTPalabras claves:Autores:Crupi F., Esseni D., Marco Lanuzza, Palestri P., Settino F., Strangio S.Fuentes:scopus