Mostrando 4 resultados de: 4
Filtros aplicados
Publisher
2017 5th Berkeley Symposium on Energy Efficient Electronic Systems, E3S 2017 - Proceedings(1)
IEEE Transactions on Electron Devices(1)
PRIME 2017 - 13th Conference on PhD Research in Microelectronics and Electronics, Proceedings(1)
Solid-State Electronics(1)
Área temáticas
Física aplicada(4)
Área de conocimiento
Ingeniería electrónica(4)
Origen
scopus(4)
Benchmarks of a III-V TFET technology platform against the 10-nm CMOS FinFET technology node considering basic arithmetic circuits
ArticleAbstract: In this work, a benchmark for low-power digital applications of a III-V TFET technology platform agaPalabras claves:Full adders, III-V, Ripple carry adders, TFETAutores:Crupi F., Esseni D., Marco Lanuzza, Palestri P., Selmi L., Strangio S.Fuentes:scopusA virtual III-V tunnel FET technology platform for ultra-low voltage comparators and level shifters
Conference ObjectAbstract: In this paper, a III-V nanowire TFET technology platform is compared against the pbkp_redictive techPalabras claves:comparator, hybrid design, level shifter, TFETAutores:Crupi F., Esseni D., Marco Lanuzza, Palestri P., Settino F., Strangio S.Fuentes:scopusUnderstanding the potential and limitations of tunnel FETs for low-voltage analog/mixed-signal circuits
ArticleAbstract: In this paper, the analog/mixed-signal performance is evaluated at device and circuit levels for a IPalabras claves:Analog circuits, Analog figures of merit, Comparators, Track and hold (T/H), tunnel FET (TFET)Autores:Crupi F., Esseni D., Marco Lanuzza, Palestri P., Selmi L., Settino F., Strangio S.Fuentes:scopusSimulations and comparisons of basic analog and digital circuit blocks employing Tunnel FETs and conventional FinFETs
Conference ObjectAbstract: In the past decade the Tunnel Field Effect Transistor (TFET) relying on band-To-band tunneling (BTBTPalabras claves:Autores:Crupi F., Esseni D., Marco Lanuzza, Palestri P., Settino F., Strangio S.Fuentes:scopus