Three-dimensional k p real-space quantum transport simulations of p-type nanowire transistors: Influence of ionized impurities

Article

Abstract: We present a three-dimensional quantum transport simulator for p-type nanowire transistors. This sel

Palabras claves:

Autores:

Bescond M., Cavassilas N., Lannoo M., Laurent Raymond, Michelini F., Pons N.

Fuentes:

scopus