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Three-dimensional k p real-space quantum transport simulations of p-type nanowire transistors: Influence of ionized impurities

Abstract:

We present a three-dimensional quantum transport simulator for p-type nanowire transistors. This self-consistent model expresses a six-band k p Hamiltonian within the non-equilibrium Green's function formalism. Transport properties are analyzed with and without the presence of ionized impurities in the channel. We observe that inter-subband coupling generates a rich structure of peaks in the transmission coefficients even in the intrinsic situation. A single donor leads to a current decrease whereas its acceptor counterpart induces complicated resonant and anti-resonant features. Unlike n-type devices, our conclusions pinpoint that the p-type nanowire transistors exhibit intricate transmission variations that can potentially generate larger variability and whose modeling requires a multi-band based simulator. © 2011 American Institute of Physics.