Fano resonance in heavily doped porous silicon

Article

Abstract: Unexpectedly, the Fano resonance caused by the interference of continuum electron excitations with t

Palabras claves:

porous silicon, Raman spectroscopy

Autores:

Acquaroli L.N., Arce R.D., Comedi D., Koropecki R.R., Luis José Borrero González, Pusep Y.A., Rodrigues A.D., Tirado M., Urteaga R.

Fuentes:

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scopus