Performance and reliability of ultra-thin oxide nMOSFETs under variable body bias

Article

Abstract: This experimental study investigates the performance and the reliability of nMOSFETs with channel le

Palabras claves:

CMOS devices, Forward body bias, reliability, Reverse body bias, Ultra-thin oxide

Autores:

Crupi F., Falbo P., Magnelli L., Marco Lanuzza, Nafría M., Rodríguez R.

Fuentes:

scopus