Erratum: Realizing the potential of RF-sputtered hydrogenated fluorine-doped indium oxide as an electrode material for ultrathin SiO<inf>x</inf>/poly-si passivating contacts (ACS Applied Energy Materials (2020) 3:9 (8606-8618) DOI: 10.1021/acsaem.0c01206)

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Abstract: The authors inadvertently misreported the order of magnitude of the TCO deposition pressure, for whi

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Autores:

Eijt S., Han C., Isabella O., Mazzarella L., Montes A., Paul Procel, Schut H., Yang G., Zeman M., Zhang X., Zhao Y.

Fuentes:

scopus