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Patterned arrays of lateral heterojunctions within monolayer two-dimensional semiconductors
ArticleAbstract: The formation of semiconductor heterojunctions and their high-density integration are foundations ofPalabras claves:Autores:Boulesbaa A., Geohegan D.B., Ivanov I.N., Lee J., Leonardo Basile, Lin M.W., Lupini A.R., Mahjouri-Samani M., Puretzky A.A., Rouleau C.M., Wang K., Xiao K., Yoon M.Fuentes:googlescopusIsoelectronic Tungsten Doping in Monolayer MoSe<inf>2</inf>for Carrier Type Modulation
ArticleAbstract:Palabras claves:alloys, carrier type modulation, isoelectronic, Mo W Se 1- x x 2, p−n homojunctionsAutores:Chang L.Y., Chen C.H., Geohegan D.B., Hus S.M., Idrobo J.C., Kuo Y.C., Lee J., Leonardo Basile, Li A.P., Li X., Lin M.W., Puretzky A.A., Rouleau C.M., Wang K., Xiao K.Fuentes:googlescopusVan der Waals Epitaxial Growth of Two-Dimensional Single-Crystalline GaSe Domains on Graphene
ArticleAbstract: Two-dimensional (2D) van der Waals (vdW) heterostructures are a family of artificially structured maPalabras claves:Chemical vapor deposition, GaSe, Graphene, heterostructures, van der Waals epitaxyAutores:Chi M., Geohegan D.B., Huang B., Idrobo J.C., Lee J., Leonardo Basile, Li X., Lin M.W., Ma C., Puretzky A.A., Rouleau C.M., Sumpter B.G., Vlassiouk I.V., Xiao K., Yoon M.Fuentes:googlescopus