DC and low-frequency noise behavior of the conductive filament in bipolar HfO<inf>2</inf>-based resistive random access memory

Article

Abstract: This paper addresses the low frequency noise (LFN) properties of bipolar HfO2-based resistive random

Palabras claves:

Hafnium oxide, Low-frequency noise, Non-volatile memory, Quantum point contact, Resistive RAM

Autores:

Crupi F., Goux L., Luis Miguel Procel Moya, Maccaronio V., Miranda E., Simoen E., Trojman L.

Fuentes:

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