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DC and low-frequency noise behavior of the conductive filament in bipolar HfO2-based resistive random access memory
ArticleAbstract: This paper addresses the low frequency noise (LFN) properties of bipolar HfO<inf>2</inf>-based resisPalabras claves:Hafnium oxide, low frequency noise, Non-volatile memory, Quantum point contact, Resistive RAMAutores:Crupi F., Goux L., Luis Miguel Procel Moya, Maccaronio V., Miranda E., Simoen E., Trojman L.Fuentes:googlescopusAnalysis of the impact of doping levels on performance of back contact - back junction solar cells
Conference ObjectAbstract: In this work, by exploiting two-dimensional (2-D) TCAD numerical simulations, we performed a study oPalabras claves:BC-BJ solar cell, Dark analysis, Doping peak, TCAD simulationAutores:Cocorullo G., Crupi F., Fiegna C., Maccaronio V., Magnone P., Paul Procel, Zanuccoli M.Fuentes:scopusAnalysis of the impact of rear side geometry on performance of back-contact back-junction solar cells
Conference ObjectAbstract: In this work, we performed a study of rear side geometry of a back-contact back-junction solar cellPalabras claves:Back-contact solar cell, Dark analysis, numerical simulation, Photovoltaics, Solar cellAutores:Cocorullo G., Crupi F., Maccaronio V., Paul Procel, Zanuccoli M.Fuentes:scopusExperimental evidence of the quantum point contact theory in the conduction mechanism of bipolar HfO2-based resistive random access memories
ArticleAbstract: The quantum point contact (QPC) model for dielectric breakdown is used to explain the electron transPalabras claves:Autores:Crupi F., Degraeve R., Goux L., J. Moreno, Luis Miguel Procel Moya, Maccaronio V., Simoen E., Trojman L.Fuentes:scopusUnderstanding the Optimization of the Emitter Coverage in BC-BJ Solar Cells
Conference ObjectAbstract: In this work, by exploiting two-dimensional (2-D) TCAD numerical simulations, we performed a study oPalabras claves:back contact, back junction, BC-BJ, solar cells, TCADAutores:Cocorullo G., Crupi F., Guerra N., Maccaronio V., Marco Guevara, Paul ProcelFuentes:googlescopusHighly Stable PUFs Based on Stacked Voltage Divider for Near-Zero BER Native Sensitivity to Voltage Variations
ArticleAbstract: This paper explores a class of highly stable static monostable physically unclonable functions (PUFsPalabras claves:CMOS design, Hardware security, IOT, Masking, Physically Unclonable Function, voltage dividerAutores:Crupi F., Maccaronio V., Marco Lanuzza, Rose R.D., Vatalaro M.Fuentes:scopusA Multi-Bit PUF Architecture Using a 2T Sub-Threshold Voltage Divider
OtherAbstract: In this paper, a highly reliable multi-bit physically unclonable function (PUF) is proposed. The solPalabras claves:Hardware security, multi-bit, PUF, SMV, sub-threshold voltage dividerAutores:Crupi F., Maccaronio V., Marco Lanuzza, Rose R.D., Vatalaro M.Fuentes:scopusNumerical simulation of back contact-back junction solar cells with emitter double contact
Conference ObjectAbstract: This work presents a simulation study of Back Contact-Back Junction solar cells (BC-BJ) with emitterPalabras claves:BC-BJ, Double contact, Emitter, numerical simulation, Solar cellAutores:Cocorullo G., Crupi F., Guerra N., Maccaronio V., Marco Guevara, Paul Procel, Pierro S.Fuentes:scopusNumerical simulation of the impact of design parameters on the performance of back-contact back-junction solar cell
ArticleAbstract: This work presents a study based on electro-optical numerical simulations of the impact of geometricPalabras claves:Numerical modeling, Recombination analysis, Silicon solar cells, TCAD simulationsAutores:Cocorullo G., Crupi F., Fiegna C., Maccaronio V., Magnone P., Paul Procel, Zanuccoli M.Fuentes:scopus