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DC and low-frequency noise behavior of the conductive filament in bipolar HfO<inf>2</inf>-based resistive random access memory
ArticleAbstract: This paper addresses the low frequency noise (LFN) properties of bipolar HfO2-based resistive randomPalabras claves:Hafnium oxide, Low-frequency noise, Non-volatile memory, Quantum point contact, Resistive RAMAutores:Crupi F., Goux L., Luis Miguel Prócel Moya, Maccaronio V., Miranda E., Simoen E., Trojman L.Fuentes:googlescopusExperimental evidence of the quantum point contact theory in the conduction mechanism of bipolar HfO<inf>2</inf>-based resistive random access memories
ArticleAbstract: The quantum point contact (QPC) model for dielectric breakdown is used to explain the electron transPalabras claves:Autores:Crupi F., Degraeve R., Goux L., J. Moreno, Luis Miguel Prócel Moya, Maccaronio V., Simoen E., Trojman L.Fuentes:scopusNumerical simulation of back contact-back junction solar cells with emitter double contact
Conference ObjectAbstract: This work presents a simulation study of Back Contact-Back Junction solar cells (BC-BJ) with emitterPalabras claves:BC-BJ, Double contact, Emitter, numerical simulation, Solar cellAutores:Cocorullo G., Crupi F., Guerra N., Maccaronio V., Marco Guevara, Paul Procel, Pierro S.Fuentes:scopus