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DC and low-frequency noise behavior of the conductive filament in bipolar HfO<inf>2</inf>-based resistive random access memory
ArticleAbstract: This paper addresses the low frequency noise (LFN) properties of bipolar HfO2-based resistive randomPalabras claves:Hafnium oxide, Low-frequency noise, Non-volatile memory, Quantum point contact, Resistive RAMAutores:Crupi F., Goux L., Luis Miguel Prócel Moya, Maccaronio V., Miranda E., Simoen E., Trojman L.Fuentes:googlescopusUnderstanding the Optimization of the Emitter Coverage in BC-BJ Solar Cells
Conference ObjectAbstract: In this work, by exploiting two-dimensional (2-D) TCAD numerical simulations, we performed a study oPalabras claves:back contact, back junction, BC-BJ, solar cells, TCADAutores:Cocorullo G., Crupi F., Guerra N., Maccaronio V., Marco Guevara, Paul ProcelFuentes:googlescopus