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Dispersive phonon linewidths: The E<inf>2</inf> phonons of ZnO

Abstract:

Raman measurements of the E2high phonons of ZnO with several isotopic compositions at 7K and at 300K, and pressure dependence measurements at 300K were performed. Thus, striking differences were found in the linewidth at low and high temperatures between the different samples, together with a nonmonotonic dependence of the linewidth on pressure. Such an unusual behavior can be explained by the existence of a steep ridge in the two-phonon DOS and its mass and pressure dependence, obtained with the aid of first principles calculations.

Año de publicación:

2003

Keywords:

    Fuente:

    scopusscopus

    Tipo de documento:

    Article

    Estado:

    Acceso restringido

    Áreas de conocimiento:

    • Ciencia de materiales

    Áreas temáticas:

    • Magnetismo

    Contribuidores:

    Romero A.H.Romero A.H.
    Widulle F.Widulle F.
    Jorge SerranoJorge Serrano
    Manjón F.J.Manjón F.J.
    Lauck R.Lauck R.
    Cardona M.Cardona M.