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Hydrogenic Impurity States in a Delta-Layer Within Quantum Wells in a Transversal Electric Field

Abstract:

The effect of a transversal electric field on the impurity binding energy and the energy differences between the space-quantized subbands of center delta-doped SiGe/Si quantum well structure is studied numerically with a self-consistent method. The result is explained in terms of the concurrent effects of impurity ionization and the applied field. The pbkp_redicted phenomenon can be used to tune the energy distances and, accordingly, the working frequencies of possible optical devices.