New drain current model for MESFET/HEMT devices based on pulsed measurements

Abstract:

In this work, a new ids current equation and FET model are proposed based on DC and pulsed I/V measurements. Its implementation is based on the identification of a new function that characterizes the differences between dynamic and static conditions. The performance of the model was evaluated with scattering, DC and pulsed measurements on different kinds of devices. The results show good agreement for low-high power transistors. © 2006 EuMA.

Año de publicación:

2006

Keywords:

• Scattering parameter measurement
• Circuit modeling
• Microwave devices
• FET circuits
• MESFETs
• pulsed measurements

Fuente:

scopus