Spin-orbit splitting of acceptor states in Si and C

Abstract:

We report calculations of the Γ8-Γ7 spin-orbit splittings of substitutional acceptor levels in silicon and diamond and corresponding Raman measurements for Si:X (X = B, Al, Ga, In). The calculations were performed using a Green's function method based on a full-zone 30×30 k·p Hamiltonian together with a Slater-Koster ansatz for the acceptor potential. The results are in reasonable agreement with experimental data.

Año de publicación:

1999

Keywords:

Fuente:

scopus