Free carrier absorption in the Ge:Sb:Te system

Article

Abstract: Absorption in the infrared region in the Ge:Sb:Te system has been observed in films having stoichiom

Palabras claves:

A. disordered systems, D. Optical properties, D. phase transitions, E. light absorption and reflection

Autores:

Chao B.B., González-Hernandez J., López-Cruz E., Martin Yañez-Limon, Ovshinsky S.R., Strand D.

Fuentes:

scopus