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A Defect-Centric Analysis of the Temperature Dependence of the Channel Hot Carrier Degradation in nMOSFETs
ArticleAbstract: The defect-centric distribution is used to study the temperature dependence of channel hot carrier (Palabras claves:channel hot carrier degradation, defect-centric distribution, temperature analysisAutores:Crupi F., Franco J., Kaczer B., Luis Miguel Prócel Moya, Trojman L.Fuentes:googlescopusA Defect-Centric perspective on channel hot carrier variability in nMOSFETs
ArticleAbstract: In this work we confirm the validity of the Defect-Centric distribution for pbkp_redicting the CHC bPalabras claves:channel hot carrier degradation, defect-centric distribution, variabilityAutores:Crupi F., Franco J., Kaczer B., Luis Miguel Prócel Moya, Trojman L., Tuinhout H., Wils N.Fuentes:googlescopusDefect-centric distribution of channel hot carrier degradation in nano-MOSFETs
ArticleAbstract: The defect-centric distribution is used, for the first time, to study the channel hot carrier (CHC)Palabras claves:channel hot-carrier, defect-centric distribution, nFETAutores:Crupi F., Franco J., Kaczer B., Luis Miguel Prócel Moya, Trojman L.Fuentes:googlescopusOrigins and implications of increased channel hot carrier variability in nFinFETs
Conference ObjectAbstract: Channel hot carrier (CHC) stress is observed to result in higher variability of degradation in deeplPalabras claves:Bias Temperature Instability (BTI), Channel Hot Carriers (CHC), FinFETs, Time-Dependent VariabilityAutores:Bina M., Bury E., Chiarella T., Cho M., Crupi F., De Keersgieter A., Franco J., Grasser T., Groeseneken G., Horiguchi N., Ji Z., Kaczer B., Luis Miguel Prócel Moya, Pitner G., Putcha V., Roussel P.J., Thean A., Trojman L., Tyaginov S., Weckx P., Wimmer Y.Fuentes:googlescopus