Mostrando 4 resultados de: 4
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2010 14th International Workshop on Computational Electronics, IWCE 2010(1)
Applied Physics Letters(1)
Journal of Applied Physics(1)
Microelectronics Journal(1)
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scopus(4)
3D real-space quantum transport simulation of nanowire MOS transistors: Influence of the ionized doping impurity
ArticleAbstract: We report a numerical study of both donor- and acceptor doping impurity effects in the quantum transPalabras claves:Doping impurity, Green's function, Nanowire transistors, Quantum transport, SimulationAutores:Bescond M., Lannoo M., Laurent Raymond, Michelini F., Pala M.Fuentes:scopusOriginal shaped nanowire metal-oxide-semiconductor field-effect transistor with enhanced current characteristics based on three-dimensional modeling
ArticleAbstract: This work presents original nanowire transistor architectures leading to device performance improvemPalabras claves:Autores:Bescond M., Cavassilas N., Laurent Raymond, Michelini F., Pons N.Fuentes:scopusThree-dimensional k p real-space quantum transport simulations of p-type nanowire transistors: Influence of ionized impurities
ArticleAbstract: We present a three-dimensional quantum transport simulator for p-type nanowire transistors. This selPalabras claves:Autores:Bescond M., Cavassilas N., Lannoo M., Laurent Raymond, Michelini F., Pons N.Fuentes:scopusThree-dimensional k.p quantum simulations of p-type nanowire MOS transistors: Influence of ionized impurity
Conference ObjectAbstract: We have developed a full three-dimensional real-space quantum transport simulator for p-type nanowirPalabras claves:Acceptor, Hole, Impurity, k.p method, Nanowire, Quantum, Resonant interferences, transportAutores:Bescond M., Cavassilas N., Lannoo M., Laurent Raymond, Michelini F., Pons N.Fuentes:scopus