Mostrando 10 resultados de: 29
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Publisher
Electronics (Switzerland)(3)
Proceedings of the 2016 IEEE ANDESCON, ANDESCON 2016(3)
2020 IEEE 11th Latin American Symposium on Circuits and Systems, LASCAS 2020(2)
2021 IEEE 12th Latin American Symposium on Circuits and Systems, LASCAS 2021(2)
2022 IEEE 13th Latin American Symposium on Circuits and Systems, LASCAS 2022(2)
Área temáticas
Ciencias de la computación(7)
Electricidad y electrónica(2)
Ingeniería y operaciones afines(2)
Física(1)
Instrumentos de precisión y otros dispositivos(1)
Área de conocimiento
Ingeniería electrónica(18)
Ciencia de materiales(11)
Energía(4)
Fabricación de dispositivos semiconductores(4)
Semiconductor(3)
High-Speed and Low-Energy Dual-Mode Logic based Single-Clack-Cycle Binary Comparator
Conference ObjectAbstract: This paper presents an energy-efficient single-clock-cycle binary Dual-Mode Logic (DML)-based comparPalabras claves:arithmetic circuits, binary comparator, CMOS, Dual-mode logicAutores:Luis Miguel Procel Moya, Marco Lanuzza, Ramiro Taco, Ricardo Escobar, Trojman L.Fuentes:scopusEnergy efficient self-adaptive dual mode logic address decoder
ArticleAbstract: This paper presents a 1024-bit self-adaptive memory address decoder based on Dual Mode Logic (DML) dPalabras claves:Address decoder, Controller, Dual mode logic, Self-adaptiveAutores:Ariana Musello, Cristhopher Mosquera, Esteban Garzón, Kevin Vicuña, Luis Miguel Procel Moya, Mateo Rendón, Ramiro Taco, Sara Benedictis, Trojman L.Fuentes:googlescopusEnergy-Efficient FinFET-Versus TFET-Based STT-MRAM Bitcells
Conference ObjectAbstract: This paper explores STT-MRAM bitcells based on double-barrier magnetic tunnel junctions (DMTJs) at tPalabras claves:double-barrier magnetic tunnel junction (DMTJ), FinFET, STT-MRAM, tunnel FET (TFET), Ultralow voltageAutores:Ariana Musello, Luis Miguel Procel Moya, Marco Villegas, Ramiro Taco, Santiago S. Perez, Trojman L.Fuentes:googlescopusFabrication of Nanopores Using the Controlled Dielectric Breakdown Technique
Conference ObjectAbstract: Controlled dielectric breakdown is becoming the main solid-state nanopore fabrication technique worlPalabras claves:ACC, controlled dielectric breakdown, DAQ, DNA RNA sensor, fluidic cell, leakage current, Silicon nitride, solid-state nanopores, transmembraneAutores:Amaguayo N., Ariana Musello, José A. Bustamante, Luis Miguel Procel Moya, Pablo Lopez, Trojman L.Fuentes:scopusFrom 32 nm to TFET Technology: New Perspectives for Ultra-Scaled RF-DC Multiplier Circuits
ArticleAbstract: In this present work, different Cross-Coupled Differential Drive (CCDD) CMOS bridge rectifiers are dPalabras claves:32 nm, CCDD, Full wave rectifier, Multiplier, PCE, TFET, VCEAutores:Eduardo Ortiz-Holguin, Luis Miguel Procel Moya, Marco Villegas, Ramiro Taco, Trojman L.Fuentes:googlescopusDefect-centric distribution of channel hot carrier degradation in nano-MOSFETs
ArticleAbstract: The defect-centric distribution is used, for the first time, to study the channel hot carrier (CHC)Palabras claves:channel hot-carrier, defect-centric distribution, nFETAutores:Crupi F., Franco J., Kaczer B., Luis Miguel Procel Moya, Trojman L.Fuentes:googlescopusDC and low-frequency noise behavior of the conductive filament in bipolar HfO<inf>2</inf>-based resistive random access memory
ArticleAbstract: This paper addresses the low frequency noise (LFN) properties of bipolar HfO2-based resistive randomPalabras claves:Hafnium oxide, Low-frequency noise, Non-volatile memory, Quantum point contact, Resistive RAMAutores:Crupi F., Goux L., Luis Miguel Procel Moya, Maccaronio V., Miranda E., Simoen E., Trojman L.Fuentes:googlescopusA 180 nm Low-Cost Operational Amplifier for IoT Applications
Conference ObjectAbstract: This paper presents the design and post-layout simulation of a two-stage operational amplifier (opamPalabras claves:0.18 μ m, cadence virtuoso, High-performance, internet of things (IoT), Low-cost, miller compensation, operational amplifier, post-layout simulation, stabilityAutores:Ariana Musello, Cristhopher Mosquera, Kevin Vicuña, Luis Miguel Procel Moya, Marco Lanuzza, Mateo Rendón, Ramiro Taco, Trojman L.Fuentes:scopusA Defect-Centric Analysis of the Temperature Dependence of the Channel Hot Carrier Degradation in nMOSFETs
ArticleAbstract: The defect-centric distribution is used to study the temperature dependence of channel hot carrier (Palabras claves:channel hot carrier degradation, defect-centric distribution, temperature analysisAutores:Crupi F., Franco J., Kaczer B., Luis Miguel Procel Moya, Trojman L.Fuentes:googlescopusA Defect-Centric perspective on channel hot carrier variability in nMOSFETs
ArticleAbstract: In this work we confirm the validity of the Defect-Centric distribution for predicting the CHC behavPalabras claves:channel hot carrier degradation, defect-centric distribution, variabilityAutores:Crupi F., Franco J., Kaczer B., Luis Miguel Procel Moya, Trojman L., Tuinhout H., Wils N.Fuentes:googlescopus